MOSFET (metal oxide semiconductor field effect transistors) and BJT (bipolar junction transistors) are two very effective power switching applications in electronics with unique qualities. Despite this, no electrical component is perfect, and both MOSFET and BJT have significant limitations. For instance, MOSFET is inefficient in blocking high reverse voltages and has very high on-state power dissipation and voltage drop. BJT needs large base currents to operate, is inefficient for fast-switching applications, and is at risk due to secondary breakdown. This is where the IGBT comes into play.
Subscribe to our Newsletter and stay tuned.
All Orders are Fulfilled in the U.S.A.
All shipments must comply with U.S.A export laws.
No exceptions.
The only independent distributor
with a NO CHINA SOURCING Pledge
“We Proudly Support Intrepid Fallen Heroes Fund that serves United States Military Personal experiencing the Invisible Wounds of War : Traumatic Brain Injury (TBI) and Post Traumatic Stress (PTS). Please visit website (www.fallenheroesfund.org) and help in their valiant effort”.
Don’t forget That If You Use Google Chrome as Your Web Browser, You Can Download the ASAP Semiconductor Browser Plug-In to Stay Up to Date On Our Latest Deals.
Request for Quote