MOSFET (metal oxide semiconductor field effect transistors) and BJT (bipolar junction transistors) are two very effective power switching applications in electronics with unique qualities. Despite this, no electrical component is perfect, and both MOSFET and BJT have significant limitations. For instance, MOSFET is inefficient in blocking high reverse voltages and has very high on-state power dissipation and voltage drop. BJT needs large base currents to operate, is inefficient for fast-switching applications, and is at risk due to secondary breakdown. This is where the IGBT comes into play.
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